High current implantation of negative copper ions into silica glasses
Book
·
OSTI ID:549792
- National Research Inst. for Metals, Tsukuba, Ibaraki (Japan)
- Kharkov State Univ. (Ukraine)
High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.
- OSTI ID:
- 549792
- Report Number(s):
- CONF-961202--; ISBN 1-55899-342-8
- Country of Publication:
- United States
- Language:
- English
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