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Title: Fabrication of selenide segmented elements

Conference ·
OSTI ID:5493176

Processes are described for the fabrication of P- and N-type elements with high-efficiency selenide segments. Bonded hot and cold caps were attached to these elements with techniques based on processes developed in successful TRANSIT and Ring converter programs. An iron barrier was introduced in the segmented P-type element between the (Cu,Ag)/sub 2/Se and (Bi,Sb)/sub 2/Te/sub 3/ layers. This was made necessary by the known degradation in thermoelectric properties of (Bi,Sb)/sub 2/Te/sub 3/ contaminated with copper. Zero current thermal gradient tests of the segmented P-type element show the iron barrier successfully prevents copper contamination of the (Bi,Sb)/sub 2/Te/sub 3/.

Research Organization:
General Atomic Co., San Diego, CA (USA)
DOE Contract Number:
AT03-76SF70060
OSTI ID:
5493176
Report Number(s):
GA-A-15785; CONF-800326-1; TRN: 80-005682
Resource Relation:
Conference: 3. international conference on thermoelectric energy conversion, Arlington, TX, USA, 12 Mar 1980
Country of Publication:
United States
Language:
English