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Magnetic-field, pressure, and temperature scaling of the first-order valence transition in pure and doped YbInCu{sub 4}

Journal Article · · Physical Review, B: Condensed Matter
; ;  [1]; ; ;  [2]
  1. National High Magnetic Field Laboratory, Florida State University, 1800 E. Paul Dirac Drive, Tallahassee, Florida 32306 (United States)
  2. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
We report measurements of the high-field (H{le}30 T) magnetoresistance R(H,T) of pure and doped YbInCu{sub 4}. A hysteretic transition is observed which we take to be the field-induced variant of the first-order valence transition observed at 42 K in YbInCu{sub 4} for H=0 T. Applied pressure suppresses the valence transition to lower temperature. By properly scaling the (H{sub v},T{sub v}) data extracted from the resistance measurements, we can collapse all of the pressure-dependent data, as well as that from doped variants of YbInCu{sub 4} at ambient pressure, onto a universal H-T phase diagram. This suggests that a single energy scale is associated with the valence transition. {copyright} {ital 1997} {ital The American Physical Society}
OSTI ID:
549301
Journal Information:
Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 1 Vol. 56; ISSN PRBMDO; ISSN 0163-1829
Country of Publication:
United States
Language:
English

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