Magnetic-field, pressure, and temperature scaling of the first-order valence transition in pure and doped YbInCu{sub 4}
Journal Article
·
· Physical Review, B: Condensed Matter
- National High Magnetic Field Laboratory, Florida State University, 1800 E. Paul Dirac Drive, Tallahassee, Florida 32306 (United States)
- Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
We report measurements of the high-field (H{le}30 T) magnetoresistance R(H,T) of pure and doped YbInCu{sub 4}. A hysteretic transition is observed which we take to be the field-induced variant of the first-order valence transition observed at 42 K in YbInCu{sub 4} for H=0 T. Applied pressure suppresses the valence transition to lower temperature. By properly scaling the (H{sub v},T{sub v}) data extracted from the resistance measurements, we can collapse all of the pressure-dependent data, as well as that from doped variants of YbInCu{sub 4} at ambient pressure, onto a universal H-T phase diagram. This suggests that a single energy scale is associated with the valence transition. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 549301
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 1 Vol. 56; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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