Analytical model of a backwall MIS Schottky barrier solar cell

Journal Article · Thu May 01 00:00:00 EDT 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.327962· OSTI ID:5491831

Krauter, B L; Soukup, R J

An investigation of the backwall MIS Schottky barrier solar cell model was made. This model incorporates the following factors which, for the most part, determine the behavior of the device: the short circuit current density, the MIS Schottky barrier junction behavior, and resistive losses. The study concentrated on the Al-Al/sub 2/O/sub 3/-GaAs-metal structure. Practical energy conversion efficiencies are predicted for this structure for a variety of semiconductor properties ranging from best- to worst-case conditions. Reflection losses are ignored assuming that the proper antireflective coating will minimize these losses. The study of the short circuit current density indicates that the structure must be that of a thin-film semiconductor with maximum current occurring when the GaAs thickness is in the 500-A to 1.2-..mu..m range, depending on minority carrier diffusion length and surface recombination velocity. The behavior of the Al-Al/sub 2/O/sub 3/-GaAs Schottky barrier junction yields an optimum open circuit voltage for an Al/sub 2/O/sub 3/ thickness of about 15 A. The resistive loss study considered both the metal ohmic contact grid structure and the semiconductor resistivity. Conversion efficiencies as high as 6% are predicted for this structure with rather poor electrical properties of the GaAs films, i.e., ..mu../sub n/ =10 cm/sup 2//V sec, ..mu../sub p/ =1 cm/sup 2//V sec, and an infinite surface recombination velocity. Thus, if care is taken in the design and fabrication of a backwall MIS Schottky barrier solar cell, reasonable efficiencies can be achieved even if the semiconductor has poor electrical properties, as expected for a polycrystalline film.

• Research Organization: Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588
• OSTI ID: 5491831
• Journal Information: J. Appl. Phys.; (United States), Vol. 51:5
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SCHOTTKY BARRIER DIODES
MATHEMATICAL MODELS
SOLAR CELLS
ALUMINIUM
ALUMINIUM OXIDES
ANTIREFLECTION COATINGS
CURRENT DENSITY
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL INSULATORS
ENERGY CONVERSION
ENERGY LOSSES
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
LOSSES
METALS
MIS TRANSISTORS
REFLECTION
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
COATINGS
CONVERSION
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
GALLIUM COMPOUNDS
JUNCTIONS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SOLAR EQUIPMENT
TRANSISTORS
140501* - Solar Energy Conversion- Photovoltaic Conversion