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Efficient CdSe/p/sup +/n Si tunnel junction photoanode for solar cell

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.92971· OSTI ID:5489558
The 1.03-V solar photoemf generated by this CdSe/p/sup +/n Si photoanode lends itself to solar storage applications. We present evidence that the 21-mA/cm/sup 2/ short circuit solar photocurrent results from a low resistance tunnel path between the CdSe conduction band and the p/sup +/ Si valence band. We use the dark electron current to calculate that the hole quasi-Fermi level at the CdSe surface of the solar illuminated open circuited photoanode lies 0.16 V below the CdSe corrosion potential. Hence even on open circuit the CdSe surface of the illuminated photoanode will corrode.
Research Organization:
Infrared Photo Ltd., 74 Burland St., Ottawa, Canada, K2B 6K1
OSTI ID:
5489558
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:11; ISSN APPLA
Country of Publication:
United States
Language:
English