Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Thickness measurement of gold contact layers in Si(Li) and Ge x-ray detectors

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.327707· OSTI ID:5489445
Four kinds of Si(Li) and a high-purity Ge x-ray detectors have been tested to measure the thicknesses of gold contact layers by comparing the response of the primary Rb-K..cap alpha.. x-rays with that of the induced Au-L..cap alpha.. x rays. Observed thicknesses ranged from 140 to 260 A. Near the x-ray energies of Au-M subshell absorption edges, the contribution of x-ray transmission through the observed gold layers to the detection efficiency is greater than or equivalent to that of the inherently attached 7.6-..mu..m beryllium window. Hence, one must be careful in the determination of the detection efficiency in x-ray semiconductor detector when low-energy x rays of less than about 4 keV are measured.
Research Organization:
Tandem Accelerator Center, University of Tsukuba, Ibaraki 300-31 Japan
OSTI ID:
5489445
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:2; ISSN JAPIA
Country of Publication:
United States
Language:
English