New devices using ferroelectric thin films

Conference · Sun Jan 01 04:00:00 EST 1989

DOI:https://doi.org/10.1109/IEDM.1989.74272· OSTI ID:5485384

Land, C. E.; Butler, M. A.; Martin, S. J.

Recent developments in the fabrication technologies of ferroelectric thin films in general and of PZT (lead zirconate titanate) and PLZT (lead lanthanum zirconate titanate) thin films in particular have suggested the feasibility of several new devices. Integrated optical devices for information processing and high-speed switching, high-density optical information processing and storage devices and spatial light modulators are some of the applications currently being investigated for these films. Ongoing studies of the longitudinal electrooptic effects and the photosensitivities of PZT and PLZT thin films have established the feasibility of erasable/rewritable optical memories with fast switching and potentially long lifetimes compared to current magneto-optic thin film devices. Some properties of PZT thin films and of new devices based on those properties are described in this paper. 15 refs., 5 figs., 1 tab.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5485384
• Report Number(s): SAND-89-1607C; CONF-891205--1; ON: DE90000789
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
BIREFRINGENCE
CURRENTS
ELECTRIC CURRENTS
ELECTRONIC EQUIPMENT
EQUIPMENT
FERROELECTRIC MATERIALS
FILMS
LANTHANUM COMPOUNDS
LEAD COMPOUNDS
MEMORY DEVICES
OPTICAL EQUIPMENT
OPTICAL PROPERTIES
OPTICAL SCANNERS
OXYGEN COMPOUNDS
PHOTOCURRENTS
PHOTOSENSITIVITY
PHYSICAL PROPERTIES
PLZT
PZT
RARE EARTH COMPOUNDS
REFRACTION
SENSITIVITY
THIN FILM STORAGE DEVICES
THIN FILMS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ZIRCONATES
ZIRCONIUM COMPOUNDS