Temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

Journal Article · Mon Feb 22 00:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99647· OSTI ID:5484905

Blood, P; Colak, S; Kucharska, A I

We have calculated the threshold current and its temperature (T) dependence in the range 200--400 K for AlGaAs quantum well lasers with 25-A-wide GaAs wells using a model which includes lifetime broadening of the transitions and broadening of the density of states function by fluctuations in the well width. The threshold current varies approximately linearly with T and the principal effect of broadening is to increase the threshold current causing a reduction in the fractional change of current with temperature. The apparent value of the parameter T/sub 0/ is increased to approx. =400 K, compared with approx. =320 K without broadening. The calculations are compared with experimental data.

• Research Organization: Philips Research Laboratories, Redhill, Surrey RH1 5HA, England
• OSTI ID: 5484905
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 52:8
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
MATHEMATICAL MODELS
THRESHOLD CURRENT
ALUMINIUM ARSENIDES
ENERGY-LEVEL DENSITY
EXPERIMENTAL DATA
FLUCTUATIONS
GALLIUM ARSENIDES
HIGH TEMPERATURE
THEORETICAL DATA
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
VARIATIONS
420300* - Engineering- Lasers- (-1989)