Negative-ion desorption from insulators by electron excitation of core levels

Journal Article · Mon Jul 08 04:00:00 EDT 1991 · Physical Review Letters; (USA)

DOI:https://doi.org/10.1103/PhysRevLett.67.232· OSTI ID:5461787

Lanzillotto, A ^[1]; Madey, T E ^[2]; Baragiola, R A ^[3]

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1. David Sarnoff Research Center, CN 5300, Princeton, New Jersey 08543-5300 (USA)
2. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855-0849 (USA)
3. Engineering Physics, University of Virginia, Charlottesville, Virginia 22901 (USA)

We have observed the desorption of O{sup {minus}} and Si{sup {minus}} ions during the electron bombardment of SiO{sub 2}, and have determined ion yields and kinetic-energy distributions at electron energies {gt}100 eV. The threshold energy for the O{sup {minus}} yield corresponds to the excitation of Si-{ital L}-shell core levels. We propose that multielectron excitations cause the ejection of positive ions or neutral atoms from the surface, and that these species can capture electrons in the surface region to form negative ions. Alternatively, the creation of superexcited electronic states of an SiO{sub 2} surface complex may lead to the ejection of O{sup {minus}}.

• OSTI ID: 5461787
• Journal Information: Physical Review Letters; (USA), Journal Name: Physical Review Letters; (USA) Vol. 67:2; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANIONS
CHALCOGENIDES
CHARGED PARTICLES
COLLISIONS
DESORPTION
ELECTRON COLLISIONS
ENERGY
ENERGY RANGE
ENERGY SPECTRA
FILMS
IONS
KEV RANGE
KEV RANGE 01-10
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
OXYGEN IONS
SILICA
SILICON COMPOUNDS
SILICON IONS
SILICON OXIDES
SPECTRA
THRESHOLD ENERGY