Photodector for semiconductor-laser pulses

Journal Article · Sun Jun 01 00:00:00 EDT 1986 · Instrum. Exp. Tech. (Engl. Transl.); (United States)

OSTI ID:5455779

Naidenko, A I; Andrievekii, G G; Bobrikov, S A; Mindra, P V

This paper describes a device for receiving pulses from a semiconductor laser that uses a photodiode with a capacitance of 50-100 pF and a sensitivity of 0.5 A/W. An increased photodiode load resistance and amplifier correction provide a satisfactory signal-to-noise ratio at frequencies from 8 kHz to 6 MHz for reception of light pulses with a power ca 0.1 uW and a duration of 100 nsec in the 900-nm band. The signal-to-noise ratio can be further improved by using several transistors in parallel or a high-slope KP903 field effect transistor in the input stage, which requires recorrection, since the input capacitance of the amplifier is increased.

• Research Organization: Odessa Polytechnic Institute
• OSTI ID: 5455779
• Journal Information: Instrum. Exp. Tech. (Engl. Transl.); (United States), Journal Name: Instrum. Exp. Tech. (Engl. Transl.); (United States) Vol. 28:6, PT. 2; ISSN INETA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
440300 -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
AMPLIFIERS
BEAM MONITORING
BEAM MONITORS
CALIBRATION
CAPACITANCE
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
EQUIPMENT
FIELD EFFECT TRANSISTORS
LASERS
MEASURING INSTRUMENTS
MONITORING
MONITORS
PERFORMANCE
PHOTODETECTORS
PHOTODIODES
PHYSICAL PROPERTIES
RESISTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SEMICONDUCTOR RESISTORS
SENSITIVITY
SIGNAL-TO-NOISE RATIO
SPECTRAL RESPONSE
TRANSISTORS