Unanalyzed ion implantation procedure with incoherent light scanning annealing for silicon solar cells manufacturing

Conference · Wed Sep 01 00:00:00 EDT 1982 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5449540

Bentini, G; Correra, L; Galloni, R; Hage-Ali, M; Mesli, A; Muller, J C; Pedulli, L; Siffert, P

Unanalyzed ion implantation procedure (AMI technique) in association with incoherent light scanning annealing in the solid phase regime has been experimented to obtain solar cells. Silicon single crystals have been used to get a better understanding of the process and to make direct comparison with other doping process. The main results of the characterization of the doped layer are: the carrier concentration profile shows a maximum of 3-4 x 10/sup 20/ cm/sup -3/ active ions; the values of carrier mobility are similar to these obtained by furnace annealing. Solar cells test at AM1 show promising values for efficiency. These results have been compared to AMI procedure followed by a laser pulsed annealing in the liquid phase regime and to classical ion implantion solid phase annealed with the incoherent light.

• Research Organization: Laboratorio Lamel Consiglio Nazionale delle Ricerche, Bologna
• OSTI ID: 5449540
• Report Number(s): CONF-820906-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 16. IEEE photovoltaics specialists conference, San Diego, CA, USA, 28 Sep 1982
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
ANNEALING
FABRICATION
ION IMPLANTATION
CARRIER DENSITY
CARRIER LIFETIME
COMPARATIVE EVALUATIONS
CRYSTAL DOPING
INCOHERENT SCATTERING
PERFORMANCE TESTING
QUANTUM EFFICIENCY
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
HEAT TREATMENTS
LIFETIME
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SCATTERING
SOLAR CELLS
SOLAR EQUIPMENT
TESTING
140501* - Solar Energy Conversion- Photovoltaic Conversion