Induced phonon-sideband laser operation of large-quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructures (L/sub z/ approx. 200--500 A)

Journal Article · Tue Jul 01 00:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91683· OSTI ID:5439401

Coleman, J J; Dapkus, P D; Vojak, B A; Laidig, W D; Holonyak, N Jr; Hess, K

Data are presented on photopumped metallorganic chemically vapor-deposited Al/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructures with active regions consisting of a large GaAs quantum well (L/sub z/1approx.200, 500 A) coupled to a phonon generating array of seven small GaAs wells (L/sub z/2approx.50 A). Phonon-sideband laser operation below the confined-carrier transitions of the large GaAs quantum well(s) is induced by the large number of phonons generated in the smaller GaAs wells. The induced phonon-sideband laser operation (of a larger quantum well by an array of smaller wells) leads to a measurement of the energy difference between the first-state light- and heavy-hole energies of a 200-A GaAs quantum well (4.9 meV) and directly to the GaAs L0-phonon energy h..omega../sub L/0approx. =41.0-4.9=36.1 meV.

• Research Organization: Rockwell International, Electronics Research Center, Anaheim, California 92803
• OSTI ID: 5439401
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
DATA
ENERGY LEVELS
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPTICAL PUMPING
PHONONS
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS