Few-Cycle THz Emission from Cold Plasma Oscillations

Journal Article · Wed Oct 01 00:00:00 EDT 1997 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.79.3038· OSTI ID:543846

Kersting, R; Unterrainer, K; Strasser, G; Gornik, E ^[1]; Kauffmann, H F ^[2]

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1. Institut fuer Festkoerperelektronik und Mikrostrukturzentrum der TU-Wien, Floragasse 7, A-1040 Wien (Austria)
2. Institut fuer Physikalische Chemie, Universitaet Wien, Waehringerstrasse 42, A-1090 Wien (Austria)

We report on THz emission from plasma oscillations in semiconductors excited by femtosecond optical pulses. Time-resolved correlation measurements are performed on p-i-n and n -doped GaAs structures. In p-i-n structures coherent oscillations of the hot photogenerated carrier plasma emit THz radiation. A fundamentally new emission process is proposed in n -doped GaAs structures. Here, the screening of the surface field starts plasma oscillations of the cold electrons in the GaAs bulk leading to an efficient emission of few-cycle THz radiation. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 543846
• Journal Information: Physical Review Letters, Vol. 79, Issue 16; Other Information: PBD: Oct 1997
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
SOLID-STATE PLASMA
RADIATION FLUX
OSCILLATIONS
GALLIUM ARSENIDES
P-N JUNCTIONS
PULSES
LANDAU DAMPING