Absolute cross sections for near-threshold electron-impact excitation of the 3s{sup 2}{sup 1}S{r_arrow}3s3p{sup 1}P and 3s{sup 2}{sup 1}S{r_arrow}3s3p{sup 3}P transitions in Si{sup 2+}
- JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440 (United States)
- University College London, London WC1E 6BT (United Kingdom)
- Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6372 (United States)
Absolute total cross sections for electron-impact excitation of the 3s{sup 2}{sup 1}S{r_arrow}3s3p{sup 3}P and 3s{sup 2}{sup 1}S{r_arrow}3s3p{sup 1}P transitions in Si{sup 2+} were measured using the merged electron-ion beams energy-loss technique. The results are compared to R-matrix close-coupling theory, which predicts a strong resonance enhancement of the cross section near the threshold for excitation of the {sup 3}P state and this is confirmed by the experiments. The observed disagreement between theory and experiment for the dipole excitation is suggested to be due to resonance interference. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 543797
- Journal Information:
- Physical Review A, Journal Name: Physical Review A Journal Issue: 5 Vol. 56; ISSN 1050-2947; ISSN PLRAAN
- Country of Publication:
- United States
- Language:
- English
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