High-power-nanosecond pulse shaper

Journal Article · Sat Mar 01 00:00:00 EST 1986 · Instrum. Exp. Tech. (Engl. Transl.); (United States)

OSTI ID:5435537

Bachurin, V V; D'yakonov, V P; Smerdov, V Y

A pulse shaper is described that is implemented by high-speed bipolar transistors and high-power VMOS transistors. Under a lowimpedance load, the shaper can switch a current of ca. 30 A in ca. 15 nsec. Estimation of the dynamic characteristics of high-power semiconductor switching devices, pumping of semiconductor laser light-emitting arrays, magnetic reversal of cores, etc., requires currents of units and tens of amperes and voltages of tens and hundreds of volts with rise times of 10-20 nsec.

• Research Organization: Smolensk Branch, Moscow Power Institute
• OSTI ID: 5435537
• Journal Information: Instrum. Exp. Tech. (Engl. Transl.); (United States), Vol. 28:5, PART 1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
PULSE SHAPERS
HIGH-VOLTAGE PULSE GENERATORS
PERFORMANCE
SEMICONDUCTOR LASERS
ELECTRICAL PUMPING
DESIGN
ELECTROMAGNETS
INTEGRATED CIRCUITS
LIGHT SOURCES
MAGNETIC FIELD REVERSAL
MOS TRANSISTORS
TIMING PROPERTIES
TRANSISTOR SWITCHING CIRCUITS
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FUNCTION GENERATORS
LASERS
MAGNETIC FIELD CONFIGURATIONS
MAGNETS
MICROELECTRONIC CIRCUITS
PULSE CIRCUITS
PULSE GENERATORS
PUMPING
RADIATION SOURCES
SEMICONDUCTOR DEVICES
SIGNAL CONDITIONERS
SWITCHING CIRCUITS
TRANSISTORS
420300* - Engineering- Lasers- (-1989)