High-power-nanosecond pulse shaper

Journal Article · Fri Feb 28 23:00:00 EST 1986 · Instrum. Exp. Tech. (Engl. Transl.); (United States)

OSTI ID:5435537

Bachurin, V V; D'yakonov, V P; Smerdov, V Y

A pulse shaper is described that is implemented by high-speed bipolar transistors and high-power VMOS transistors. Under a lowimpedance load, the shaper can switch a current of ca. 30 A in ca. 15 nsec. Estimation of the dynamic characteristics of high-power semiconductor switching devices, pumping of semiconductor laser light-emitting arrays, magnetic reversal of cores, etc., requires currents of units and tens of amperes and voltages of tens and hundreds of volts with rise times of 10-20 nsec.

• Research Organization: Smolensk Branch, Moscow Power Institute
• OSTI ID: 5435537
• Journal Information: Instrum. Exp. Tech. (Engl. Transl.); (United States), Journal Name: Instrum. Exp. Tech. (Engl. Transl.); (United States) Vol. 28:5, PART 1; ISSN INETA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
DESIGN
ELECTRICAL EQUIPMENT
ELECTRICAL PUMPING
ELECTROMAGNETS
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FUNCTION GENERATORS
HIGH-VOLTAGE PULSE GENERATORS
INTEGRATED CIRCUITS
LASERS
LIGHT SOURCES
MAGNETIC FIELD CONFIGURATIONS
MAGNETIC FIELD REVERSAL
MAGNETS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PERFORMANCE
PULSE CIRCUITS
PULSE GENERATORS
PULSE SHAPERS
PUMPING
RADIATION SOURCES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SIGNAL CONDITIONERS
SWITCHING CIRCUITS
TIMING PROPERTIES
TRANSISTOR SWITCHING CIRCUITS
TRANSISTORS