Method for fabricating photovoltaic device having improved short wavelength photoresponse

Patent · Tue Jul 04 04:00:00 EDT 1989

OSTI ID:5434357

Catalano, A W

This patent describes a method for fabricating a photovoltaic device. This method comprises the steps of: forming a front contact layer of transparent conductive material on a transparent superstrate; introducing the superstrate into a deposition chamber; depositing a first doped amorphous silicon-containing layer of a first conductivity type on the front contact layer from a first gaseous mixture containing silane and a first doping gas; flushing the chamber with a decontamination means for reacting with and substantially removing residual first doping contaminants resulting from deposition of the first doped layer in a gaseous state; depositing an undoped intrinsic layer of amorphous silicon-containing material on the first doped layer in the deposition chamber from a second gaseous mixture containing a silicon-containing compound; deposition a second doped amorphous silicon-containing layer of a second conductivity type on the undoped intrinsic layer from a third gaseous mixture containing silane and a second doping gas; and forming a back contact layer of conductive material on the second doped layer.

• Assignee: NOV; NOV-89-078138; EDB-89-166631
• Patent Number(s): US 4845043
• Application Number: PPN: US 7-041532A
• OSTI ID: 5434357
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FABRICATION
HYDRIDES
HYDROGEN COMPOUNDS
LAYERS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES