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Field Enhanced Dielectronic Recombination of Si{sup 11+} Ions

Journal Article · · Physical Review Letters
; ; ;  [1];  [2]; ; ; ;  [3];  [4];  [5];  [6];  [7]
  1. Institut fuer Kernphysik, Universitaet Giessen, 35392 Giessen (Germany)
  2. Manne Siegbahn Laboratory, Stockholm University, 10405 Stockholm (Sweden)
  3. Department of Physics, Stockholm University, 10405 Stockholm (Sweden)
  4. Max-Planck-Institut fuer Kernphysik, 69117 Heidelberg, Germany and Physikalisches Institut der Universitaet Heidelberg, 69120 Heidelberg (Germany)
  5. JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440 (United States)
  6. Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)
  7. Department of Physics, Rollins College, Winter Park, Florida 32749 (United States)
The enhancement of dielectronic recombination by applied electric fields has been observed and measured for the first time in a wide range of controlled and measurable fields using multiply charged ions. The heavy ion storage ring CRYRING at Stockholm University was used to store a beam of Si{sup 11+} and collide it with a cold electron target. Rydberg resonances up to n=25 are resolved for both the 2p{sub 3/2} and 2p{sub 1/2} series. The observation of a substantial monotonic increase of the rate coefficient for the group of higher Rydberg states is in puzzling disagreement with theoretical calculations of electric field enhanced dielectronic recombination. {copyright} {ital 1997} {ital The American Physical Society}
OSTI ID:
542662
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 12 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
Country of Publication:
United States
Language:
English

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