Field Enhanced Dielectronic Recombination of Si{sup 11+} Ions
Journal Article
·
· Physical Review Letters
- Institut fuer Kernphysik, Universitaet Giessen, 35392 Giessen (Germany)
- Manne Siegbahn Laboratory, Stockholm University, 10405 Stockholm (Sweden)
- Department of Physics, Stockholm University, 10405 Stockholm (Sweden)
- Max-Planck-Institut fuer Kernphysik, 69117 Heidelberg, Germany and Physikalisches Institut der Universitaet Heidelberg, 69120 Heidelberg (Germany)
- JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440 (United States)
- Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)
- Department of Physics, Rollins College, Winter Park, Florida 32749 (United States)
The enhancement of dielectronic recombination by applied electric fields has been observed and measured for the first time in a wide range of controlled and measurable fields using multiply charged ions. The heavy ion storage ring CRYRING at Stockholm University was used to store a beam of Si{sup 11+} and collide it with a cold electron target. Rydberg resonances up to n=25 are resolved for both the 2p{sub 3/2} and 2p{sub 1/2} series. The observation of a substantial monotonic increase of the rate coefficient for the group of higher Rydberg states is in puzzling disagreement with theoretical calculations of electric field enhanced dielectronic recombination. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 542662
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 12 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
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