Electron-positron momentum distributions and positron lifetime in semiconductors in the generalized gradient approximation

Journal Article · Mon Sep 01 04:00:00 EDT 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.56.7356· OSTI ID:542642

Panda, B K; LiMing, W; Fung, S; Beling, C D ^[1]

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1. Department of Physics, The University of Hong Kong, Hong Kong (China)

The positron annihilation characteristics have been calculated taking the electron-positron correlation in the generalized gradient approximation (GGA). The calculated electron-positron momentum distributions in Si along the [110] direction in the GGA scheme agree very well with the experiment. The comparison of anisotropies of the momentum distributions along different crystal directions with the theory shows that only the GGA scheme gives the exact values. The enhancement factor for the valence electrons in the electron-positron momentum density is found to be weakly dependent on the momentum. The positron lifetimes in group IV, III-V, and II-VI semiconductors agree very well with the previous calculations and the experiment. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 542642
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 12 Vol. 56; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ANGULAR MOMENTUM
ANNIHILATION
ELECTRON-POSITRON COLLISIONS
LIFETIME
LINEAR MOMENTUM
POSITRONS
SEMICONDUCTOR MATERIALS
SILICON