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Title: Temperature dependence of the reactivity of OH(X[sup 2][Pi]) with oxidized silicon nitride and PMMA film surfaces

Journal Article · · Journal of Physical Chemistry; (United States)
DOI:https://doi.org/10.1021/j100142a006· OSTI ID:5425541
; ; ;  [1]
  1. Sandia National Lab., Albuquerque, NM (United States)

The reactivity of OH(X[sup 2][Pi]) with the surface of both an oxidized silicon nitride film and a poly(methyl methacrylate) (PMMA) film is measured to be 0.60 [+-] 0.05 at room temperature. The reactivity of OH with oxidized Si[sub 3]N[sub 4] substrates displays an inverse dependence on substrate temperature, decreasing to approximately 0 at temperatures above 500 K. The reactivity is determined directly using spatially resolved laser-induced fluorescence of OH in a plasma-generated molecular beam incident on the surface. The desorbed OH has a cosine angular distribution. No evidence for a dependence of reactivity on rotational state of the OH was observed. The reactivity of OH with a PMMA film is also explored using different gas compositions in the plasma beam source. Exposure of the PMMA surface to O[sub 2] and O[sub 2]/CF[sub 4] plasmas results in the generation and desorption of OH. 45 refs., 6 figs., 1 tab.

DOE Contract Number:
AC04-76DP00789
OSTI ID:
5425541
Journal Information:
Journal of Physical Chemistry; (United States), Vol. 97:40; ISSN 0022-3654
Country of Publication:
United States
Language:
English