Temperature dependence of the reactivity of OH(X[sup 2][Pi]) with oxidized silicon nitride and PMMA film surfaces
- Sandia National Lab., Albuquerque, NM (United States)
The reactivity of OH(X[sup 2][Pi]) with the surface of both an oxidized silicon nitride film and a poly(methyl methacrylate) (PMMA) film is measured to be 0.60 [+-] 0.05 at room temperature. The reactivity of OH with oxidized Si[sub 3]N[sub 4] substrates displays an inverse dependence on substrate temperature, decreasing to approximately 0 at temperatures above 500 K. The reactivity is determined directly using spatially resolved laser-induced fluorescence of OH in a plasma-generated molecular beam incident on the surface. The desorbed OH has a cosine angular distribution. No evidence for a dependence of reactivity on rotational state of the OH was observed. The reactivity of OH with a PMMA film is also explored using different gas compositions in the plasma beam source. Exposure of the PMMA surface to O[sub 2] and O[sub 2]/CF[sub 4] plasmas results in the generation and desorption of OH. 45 refs., 6 figs., 1 tab.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5425541
- Journal Information:
- Journal of Physical Chemistry; (United States), Vol. 97:40; ISSN 0022-3654
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
HYDROXYL RADICALS
CHEMICAL REACTIONS
PMMA
SILICON NITRIDES
OXIDATION
CHEMICAL REACTION KINETICS
FILMS
ESTERS
KINETICS
NITRIDES
NITROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC POLYMERS
PNICTIDES
POLYACRYLATES
POLYMERS
POLYVINYLS
RADICALS
REACTION KINETICS
SILICON COMPOUNDS
400201* - Chemical & Physicochemical Properties
360200 - Ceramics
Cermets
& Refractories
360600 - Other Materials