Apodizing holographic gratings for the modal control of semiconductor lasers

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Applied Optics

DOI:https://doi.org/10.1364/AO.36.004993· OSTI ID:542507

Lepage, J; Massudi, R; Anctil, G; Gilbert, S; Piche, M; McCarthy, N ^[1]

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1. Departement de Physique, Equipe Laser et Optique Guidee, Centre dOptique, Photonique, et Laser, Universite Laval, Quebec G1K 7P4 (Canada)

We first present the fabrication technique of apodizing holographic gratings. Gratings with a spatially variable reflectivity profile were obtained by the interference of two Gaussian beams on a glass plate covered with a photoresist. When the exposure time was short enough to avoid saturation of the photoresist, gratings with a quasi-Gaussian reflectivity profile for the beam reflected in the {minus}1 order were produced; the reflectivity at the center could be as high as 71{percent}, and the half-width of the reflectivity profile at the e{sup {minus}1} position could be as small as 180 {mu}m. Apodizing gratings were used as the end mirror of the external cavity of a broad-area semiconductor laser. Single longitudinal- and lateral-mode operation was observed over the full range of allowed injection currents. {copyright} 1997 Optical Society of America

• OSTI ID: 542507
• Journal Information: Applied Optics, Journal Name: Applied Optics Journal Issue: 21 Vol. 36; ISSN APOPAI; ISSN 0003-6935
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
DIFFRACTION GRATINGS
HOLOGRAPHY
INFRARED SPECTRA
MILLIWATT POWER RANGE
MODE CONTROL
REFLECTIVITY
SEMICONDUCTOR LASERS
VISIBLE SPECTRA