Thermoelectric and thermal properties of GaAlAs Peltier-cooled laser diodes

Journal Article · Sun Sep 01 00:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336020· OSTI ID:5421582

Hava, S; Sequeira, H B; Hunsperger, R G

Analyses of heat spreading, temperature distribution, and resultant cooling effects in a monolithically Peltier-cooled laser (MPCL) structure are presented. The analyses were obtained by using Laplace's equation and were made under steady-state conditions, assuming constant thermal conductivity. In this MPCL structure a metal surface layer surrounds a heat-generating p-n laser junction. It is shown that by depositing relatively thick metallic cooling plates a 15% temperature reduction and 25% thermal spreading can be achieved. This heat spreading due to the passive cooling is added to the cooling obtained when the Peltier cooler is operated. Experimental measurements of the effect of Peltier cooling reveal a 6.8 /sup 0/C reduction in junction temperature corresponding to a wavelength shift of as much as 20 A.

• Research Organization: Department of Electrical Engineering, Ben Gurion University of the Negev, Beer-Sheva, Israel 84120
• OSTI ID: 5421582
• Journal Information: J. Appl. Phys.; (United States), Vol. 58:5
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
COOLING
HEAT FLOW
THERMODYNAMIC PROPERTIES
THERMOELECTRIC PROPERTIES
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
TEMPERATURE DISTRIBUTION
TEMPERATURE EFFECTS
THERMAL CONDUCTIVITY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
GALLIUM COMPOUNDS
LASERS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)