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Low temperature hopping conduction in neutron transmutation doped isotopically enriched [sup 70]Ge:Ga single crystals

Conference · · Journal of Low Temperature Physics; (United States)
OSTI ID:5417404
;  [1]; ;  [2];  [3];  [4]
  1. Univ. of California, Berkeley, CA (United States) Lawrence Berkeley Lab., CA (United States)
  2. Lawrence Berkeley Lab., CA (United States)
  3. Univ. of Missouri, Columbia, MO (United States)
  4. Kurchatov Institute of Atomic Energy, Moscow (Russian Federation)

The temperature dependence of variable range hopping resistivity [rho] in neutron transmutation doped (NTD) isotopically enriched [sup 70]Ge:Ga samples is reported. Five samples with compensation ratios K less than 0.001 and Ga concentrations between 3x10[sup 16] and 1.77x10[sup 17] cm[sup [minus]3] were studied. All samples investigated show the ln [rho][proportional to]T[sup [minus]1/2] dependence in the temperature range below 1.5K. As thermistor materials NTD [sup 70]Ge:Ga samples are found to have more than a factor of two higher sensitivity than commonly used natural NTD Ge in the temperature range between 0.2K and 1K. These results are compared with theoretical predictions for variable range hopping conduction.

DOE Contract Number:
AC03-76SF00098
OSTI ID:
5417404
Report Number(s):
CONF-930751--; CNN: W17605; ADT-8809616
Journal Information:
Journal of Low Temperature Physics; (United States), Journal Name: Journal of Low Temperature Physics; (United States) Vol. 93:3-4; ISSN JLTPAC; ISSN 0022-2291
Country of Publication:
United States
Language:
English