Low temperature hopping conduction in neutron transmutation doped isotopically enriched [sup 70]Ge:Ga single crystals
- Univ. of California, Berkeley, CA (United States) Lawrence Berkeley Lab., CA (United States)
- Lawrence Berkeley Lab., CA (United States)
- Univ. of Missouri, Columbia, MO (United States)
- Kurchatov Institute of Atomic Energy, Moscow (Russian Federation)
The temperature dependence of variable range hopping resistivity [rho] in neutron transmutation doped (NTD) isotopically enriched [sup 70]Ge:Ga samples is reported. Five samples with compensation ratios K less than 0.001 and Ga concentrations between 3x10[sup 16] and 1.77x10[sup 17] cm[sup [minus]3] were studied. All samples investigated show the ln [rho][proportional to]T[sup [minus]1/2] dependence in the temperature range below 1.5K. As thermistor materials NTD [sup 70]Ge:Ga samples are found to have more than a factor of two higher sensitivity than commonly used natural NTD Ge in the temperature range between 0.2K and 1K. These results are compared with theoretical predictions for variable range hopping conduction.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5417404
- Report Number(s):
- CONF-930751--; CNN: W17605; ADT-8809616
- Journal Information:
- Journal of Low Temperature Physics; (United States), Journal Name: Journal of Low Temperature Physics; (United States) Vol. 93:3-4; ISSN JLTPAC; ISSN 0022-2291
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CRYSTALS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EVEN-EVEN NUCLEI
GALLIUM 71
GALLIUM ISOTOPES
GERMANIUM 70
GERMANIUM ISOTOPES
INTERMEDIATE MASS NUCLEI
ISOTOPES
MATERIALS
MONOCRYSTALS
NUCLEI
ODD-EVEN NUCLEI
PHYSICAL PROPERTIES
STABLE ISOTOPES
TEMPERATURE RANGE
TEMPERATURE RANGE 0000-0013 K
TRANSMUTATION