Low cost Czochralski crystal growing technology: near term implementation of the flat plate photovoltaic cost reduction of the low cost solar array project. Third quarterly progress report, October 1-December 31, 1979

Technical Report · Mon Jan 01 00:00:00 EST 1979

DOI:https://doi.org/10.2172/5416507· OSTI ID:5416507

Roberts, E. G.

The purpose of the program is to demonstrate the growth of up to 150 kilograms of 6'' diameter single crystal silicon ingot from one crucible by the Czochralski (CZ) method. The method being developed relies upon conventional CZ technology combined with new equipment and process designs and concepts. These concepts alternate cycles of crystal growth and hot melt replenishment and are designed to be ultimately suitable for use in a high volume production facility. A Hamco Model CG2000 RC crystal grower will be utilized for the project. Modifications will be comprehended into the puller which will allow a special chamber to be fitted. This chamber will allow for the storage of polycrystalline silicon rod to be used in the accelerated melt and crucible recharge cycle. A vacuum tight isolation valve will be incorporated into the system to allow retrieval of grown crystals and crucible melt replenishment without contamination. Progress is reported.

• Research Organization: Kayex Corp., Rochester, NY (USA)
• DOE Contract Number: NAS-7-100-955270
• OSTI ID: 5416507
• Report Number(s): DOE/JPL/955270-79/3
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CZOCHRALSKI METHOD
EQUIPMENT
SILICON
CRYSTAL GROWTH
CONTROL SYSTEMS
CRUCIBLES
MICROPROCESSORS
MODIFICATIONS
SILICON SOLAR CELLS
CRYSTAL GROWTH METHODS
DIRECT ENERGY CONVERTERS
ELEMENTS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture