Radiation effects of vacuum ultraviolet laser photons on silicon dioxide

Book · Sat Nov 01 04:00:00 EST 1997

OSTI ID:541177

Kurosawa, K ^[1]; Sasaki, W; Yokotani, A ^[1]; Herman, P R ^[2]; Kurmaev, E Z; Shamin, S N; Galakhov, V E ^[3]; Takigawa, Y ^[4]

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1. Univ. of Miyazaki (Japan). Dept. of Electrical Engineering
2. Univ. of Toronto, Ontario (Canada). Electric and Computer Engineering Dept.
3. Russian Academy of Science, Yekaterinburg (Russian Federation). Inst. of Metal Physics
4. Osaka Electro-Communication Univ., Neyagawa (Japan). Solid State Electronics

The argon excimer laser provides 9.8-eV photons that readily surmount the electronic bandgap energy of SiO{sub 2} ({approximately}9.0 eV), directly generating excitons in a single-photon absorption process. The authors have shown by Si L{sub 2,3} (Si 3s {r_arrow} 2p) X-ray emission spectroscopy, Si 2p X-ray photoelectron spectroscopy and Raman spectroscopy that this absorption process is responsible for silicon precipitation in the silica. The X=ray emission studies further show that the silicon precipitates are crystalline, forming in highest concentration in 120--230 nm layer beneath the laser-irradiated surface. Silicon precipitation was not observed on samples irradiated with 146-nm krypton excimer radiation due to a smaller 9.5-eV photon energy that is below the silica bandgap.

• OSTI ID: 541177
• Report Number(s): CONF-961202--; ISBN 1-55899-343-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
EXPERIMENTAL DATA
LASER RADIATION
MICROSTRUCTURE
PRECIPITATION
RADIATION EFFECTS
SILICON OXIDES