Electronic and optical properties of vanadium doped silicon carbide crystals grown by the sublimation sandwich method

Conference · Tue Dec 31 04:00:00 UTC 1996

OSTI ID:541087

Mueller, S G; Hofmann, D; Winnacker, A ^[1]; Mokhov, E N; Ramm, M G; Roenkov, A D; Vodakov, Yu A ^[2]

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1. Univ. Erlangen-Nuernberg, Erlangen (Germany). Materials Science Inst. VI
2. Russian Academy of Sciences, St. Petersburg (Russian Federation). A.F. Ioffe Physical Technical Inst.

Cathodoluminescence-mapping experiments of n- and p-type 6H SiC intentionally doped with vanadium (V) show a local anti-correlation of the V{sup 4+} related IR-luminescence and the near bandedge donor-acceptor pair luminescence (N {yields} Al). This fact indicates that V acts as minority carrier lifetime determining impurity. The suppression of the V{sup 4+} luminescence near crystallographic defects is discussed under the possible mechanism of V precipitate formation. The binding-energy of the V{sup 4+/5+} donor level is determined to E{sub V} + 1.57 {+-} 0.05 eV by photoluminescence excitation measurements.

• OSTI ID: 541087
• Report Number(s): CONF-960450--; ISBN 0-7803-3179-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRICAL PROPERTIES
N-TYPE CONDUCTORS
OPTICAL PROPERTIES
P-TYPE CONDUCTORS
PHYSICAL PROPERTIES
SILICON CARBIDES
VANADIUM