SiGeC materials
Conference
·
OSTI ID:541084
- Inst. for Semiconductor Physics, Frankfurt (Germany)
The growth and properties of Si{sub 1{minus}y}C{sub y} and Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y} alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated. The relation between substitutional and interstitial carbon incorporation will be presented. Substitutionally incorporated C atoms allow strain manipulation, including the growth of strain-free or inversely strained Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y} layers. The mechanical properties, microscopic structure, thermal stability, as well as the influence of C atoms on band structure will be discussed.
- OSTI ID:
- 541084
- Report Number(s):
- CONF-960450--; ISBN 0-7803-3179-6
- Country of Publication:
- United States
- Language:
- English
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