Mesoscopic homogenization of semi-insulating GaAs by two-step post growth annealing

Conference · Tue Dec 31 00:00:00 EST 1996

OSTI ID:541068

Hoffmann, B; Jurisch, M; Koehler, A; Reinhold, T; Weinert, B ^[1]; Kuehnel, G; Siegel, W ^[2]; Kissinger, G ^[3]

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1. Freiberger Compound Materials GmbH, Freiberg/Sachsen (Germany)
2. TU Bergakademie Freiberg (Germany)
3. Inst. of Semiconductor Physics, Frankfurt/Oder (Germany)

Mesoscopic homogenization of the electrical properties of s.i. LEC-GaAs is commonly realized by thermal treatment of the crystals including the steps of dissolution of arsenic precipitates, homogenization of excess As and re-precipitation by creating a controlled supersaturation. Caused by the inhomogeneous distribution of dislocations and the corresponding cellular structure along and across LEC-grown crystals a proper choice of the time-temperature program is necessary to minimize fluctuations of mesoscopic homogeneity. A modified two-step ingot annealing process is demonstrated to ensure the homogeneous distribution of mesoscopic homogeneity.

• OSTI ID: 541068
• Report Number(s): CONF-960450-; ISBN 0-7803-3179-6; TRN: IM9747%%174
• Resource Relation: Conference: 10. international parallel processing symposium, Honolulu, HI (United States), 15-19 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Semiconducting and insulating materials 1996: Proceedings; PB: [395] p.
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ELECTRICAL PROPERTIES
ANNEALING
CRYSTAL DEFECTS
MICROSTRUCTURE