An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

Journal Article · Mon Jul 01 04:00:00 UTC 1991 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585381· OSTI ID:5410060

Strite, S; Salvador, A ^[1]; Ruan, J ^[2]; Li, Z ^[3]; Chen, H ^[4]; Smith, D J ^[5]; Choyke, W J ^[2]; Morkoc, H ^[6]

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1. Illinois Univ., Urbana, IL (United States). Materials Research Lab. Illinois Univ., Urbana, IL (United States). Coordinated Science Lab. Illinois Univ., Urbana, IL (United States). Dept. of Physics
2. University of Pittsburgh, Department of Physics, Pittsburgh, PA (USA)
3. Arizona State University, Center for Solid State Science, Tempe, AZ (USA)
4. University of Illinois, Department of Materials Science and Engineering, Urbana, IL (USA)
5. Arizona State Univ., Tempe, AZ (United States). Center for Solid State Science Arizona State Univ., Tempe, AZ (United States). Dept. of Physics and Astronomy
6. Illinois Univ., Urbana, IL (United States). Materials Research Lab. Illinois Univ., Urbana, IL (United States). Coordinated Science Lab.

We present the first comprehensive investigation of the bulk properties, both optical and structural, of cubic GaN as grown by plasma-assisted molecular-beam epitaxy on vicinal (100) GaAs substrates. X-ray measurements determined the crystal structure of GaN/GaAs to be cubic with a lattice constant of 4.5 A. High resolution transmission electron microscopy revealed a high density of planar defects propagating along the GaN {l brace}111{r brace} planes. The majority of the defects originated from disordered regions at the GaN/GaAs interface. The optical properties of the films were investigated by cathodoluminescence which revealed a broad midgap peak as well as several sharp emission peaks just below the expected band gap. The data imply that the room temperature band gap of cubic GaN is approximately 3.45 eV.

• DOE Contract Number: AC02-76ER01198
• OSTI ID: 5410060
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CATHODOLUMINESCENCE
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON MICROSCOPY
ENERGY GAP
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM NITRIDES
LAYERS
LUMINESCENCE
MEDIUM TEMPERATURE
MICROSCOPY
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION