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U.S. Department of Energy
Office of Scientific and Technical Information

Method of forming superconductive barrier devices

Patent ·
OSTI ID:5403804
Superconductive barrier devices, comprising a gate region with a control line adjacent to the gate, which can perform cryogenic switching and logic functions, are described. According to the various embodiments, the gate region may comprise a relatively thin superconductive layer separated by a very thin insulative layer from a relatively thick superconductive layer, a discontinuous superconductive layer separated by a thin insulative layer from a thick superconductive layer, a pair of superconductors separated by an insulating barrier thin enough to permit electron pair tunneling therethrough, or a granular superconductor wherein the grains are separated by an insulating barrier thin enough to permit electron pair tunneling therethrough. Also disclosed are superconductive barrier devices comprising granular superconductors which may be employed as millimeter or submillimeter radiation generators or detectors.
Assignee:
Texas Instruments Inc.
Patent Number(s):
US 3725213
OSTI ID:
5403804
Country of Publication:
United States
Language:
English