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Precipitation and phase stability of solid Kr in cavities after room-temperature implantation of Al. Revision

Conference ·
OSTI ID:5400851
Microstructural changes and the precipitation of Kr in thin (approx.70 nm) films of Al during 65 keV Kr/sup +/ ion implantation at room temperature have been studied with Transmission Electron Microscopy (TEM), thermal desorption spectroscopy, and Rutherford backscattering. For fluences below 2 x 10/sup 19/ Kr/sup +/m/sup -2/, isolated dislocation loops were observed to evolve into a dislocation network. Above fluences of 2 x 10/sup 19/ Kr/sup +/m/sup -2/, the microstructure is dominated by a high density of cavities whose average size increases with fluence. The appearance of additional electron diffraction reflections indicates that the cavities contain solid fcc Kr that is epitaxially aligned with the fcc Al matrix. Above fluences of 2 x 10/sup 20/ Kr/sup +/m/sup -2/, an increasing fraction of the Kr within larger cavities is in a fluid phase. The thermal stability of the microstructure and the phase stability of solid Kr, in cavities, was investigated up to 910/sup 0/K by in situ TEM annealing experiments and by insitu thermal cycling between approx.90 and 300/sup 0/K. Melting and solidification of Kr in cavities was observed and compared to the melting curve for bulk solid Kr.
Research Organization:
Argonne National Lab., IL (USA). Materials Science and Technology Div.; Kernforschungsanlage Juelich G.m.b.H. (Germany, F.R.)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
5400851
Report Number(s):
CONF-8604103-2; ON: DE86014572
Country of Publication:
United States
Language:
English