Semiconductor laser device having facets provided with dielectric layers

Patent · Tue Jul 08 04:00:00 EDT 1986

OSTI ID:5396977

Sasaki, Y; Kajimura, T; Nakamura, M

A semiconductor laser device is described of the type which includes at least one laminate of a first dielectric layer and a second dielectric layer on one of two facets of a resonator and in which the refractive index of the first dielectric layer is lower than that of the second dielectric layer. The second dielectric layer consists of an amorphous material containing silicon and hydrogen as its essential elements and the other of the two facets is provided with a coating consisting of a single dielectric layer so as to provide the other of the two facets with a lower refractive index than that of the one of the two facets.

• Assignee: Hitachi, Ltd., Tokyo
• Patent Number(s): US 4599729
• OSTI ID: 5396977
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMORPHOUS STATE
COATINGS
DESIGN
DIELECTRIC MATERIALS
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
HYDROGEN
LASERS
LAYERS
MATERIALS
NONMETALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
REFRACTIVITY
RESONATORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON