CdS/p-Si solar cells made by serigraphy

Journal Article · Mon Apr 11 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99175· OSTI ID:5391545

Garcia, F J; Ortiz-Conde, A; Sa-Neto, A

CdS/p-Si solar cells have been fabricated depositing the CdS layer by serigraphy. Open circuit voltages of 538 mV, short circuit current densities of 32 mA cm/sup -2/, fill factors of 0.52, and conversion efficiencies of 8.1% have been measured under 100 mW cm/sup -2/ (AM1) simulated solar illumination.

• Research Organization: Departamento de Electronica y Circuitos, Universidad Simon Bolivar, Caracas 1080, Venezuela
• OSTI ID: 5391545
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 52:15
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CADMIUM SULFIDE SOLAR CELLS
ELECTRICAL PROPERTIES
PERFORMANCE
SILICON SOLAR CELLS
CADMIUM SULFIDES
CURRENT DENSITY
EFFICIENCY
ELECTRICAL FAULTS
EXPERIMENTAL DATA
FABRICATION
SILICON
CADMIUM COMPOUNDS
CHALCOGENIDES
DATA
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
INFORMATION
INORGANIC PHOSPHORS
NUMERICAL DATA
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
SULFIDES
SULFUR COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion