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U.S. Department of Energy
Office of Scientific and Technical Information

An overview of ferroelectric thin film technology

Conference ·
OSTI ID:539096
; ; ;  [1]
  1. Sandia National Labs., Albuquerque, NM (United States)

There has recently been an explosion of technical interest in ferroelectric (FE) thin films because of the large number of diverse, near term applications for which these films are the primary media. These applications include piezoelectric micromotors, pyrolelectric detectors, nonvolatile memories, and high frequency filters. Solution deposited Pb(Zr,Ti)O{sub 3} thin films will be used as a model to demonstrate how solution synthesis and underlying electrode technology can be used to control microstructure, crystallite orientation and 90{degrees} domain assemblages. These nanoscale features determine properties, such as, remanent polarization, dielectric constant and piezoelectric coefficients that substantially impact device performance. Relationships among solution synthesis route, Zr to Ti stoichiometry and associated thermal processing and their effect on phase assemblage and resultant properties is presented. While electrode surface nanotopography is a primary factor that controls formation of undesirable second phase assemblages and perovskite is a primary factor that controls formation of undesirable second phase assemblages and perovskite grain size, transformation stress and grain size substantially determine 90{degrees} domain orientations.

OSTI ID:
539096
Report Number(s):
CONF-960807--
Country of Publication:
United States
Language:
English