Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

/sup 57/Fe-YIG: Narrow x-ray linewidth epitaxial layers on Gd/sub 3/Ga/sub 5/O/sub 12/

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.340617· OSTI ID:5390105
Epitaxial layers of 81% /sup 57/Fe-enriched Y/sub 3/Fe/sub 5/O/sub 12/ were grown on thick, (100)-oriented substrates of Gd/sub 3/Ga/sub 5/O/sub 12/ for experiments in resonant nuclear diffraction. Layers up to 10 ..mu..m thick were grown on each side of 32-mm-diam, 5-mm-thick wafers using techniques common for the growth of magnetic bubble materials, but with the use of a PbO-V/sub 2/O/sub 5/ flux in place of the usual PbO-B/sub 2/O/sub 3/ flux. The PbO-V/sub 2/O/sub 5/ flux offers a lower solubility of YIG which allows a reduction in the amount of /sup 57/Fe oxide required for layer growth. Thick substrates were used to reduce possible bowing from lattice constant mismatch. Lead incorporation onto yttrium lattice sites was controlled by adjusting the growth temperature, and this allowed a close lattice constant match between the layers and the substrate. Layer thickness was essentially uniform across the layer diameter with the edges 5% thicker than the center. Curie temperature and Faraday rotation measurements of the equivalent (111)-oriented material indicate as a formula unit (Y/sub 2.96/Pb/sub 0.04/)Fe/sub 3/(Fe/sub 1.94/Y/sub 0.06/)O/sub 12/. YIG/YIG double-crystal diffraction by tungsten L-..gamma../sub 1/ irradiation of a 5 x 7-mm rectangular area of the first crystal gave a composite linewidth of 13 arcsec for the )400) reflection. This same linewidth was observed in synchrotron illumination of the central 80% of the area of the first layer. The possibility of linewidth reduction in this material is discussed.
Research Organization:
Electronic Materials and Devices Laboratory, Allied-Signal Incorporated, P. O. Box 1021-R, Morristown, New Jersey 07960
OSTI ID:
5390105
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:8; ISSN JAPIA
Country of Publication:
United States
Language:
English