Piezoelectric shear wave resonator and method of making same
A piezoelectric shear wave resonator having a predetermined temperature coefficient of resonance is described comprising: a composite comprising a first film of piezoelectric material having a 6 mm symmetry, the film having its C-axis substantially inclined at an acute angle with respect to the film normal, such that the shear wave coupling coefficient of the film significantly exceeds the longitudinal wave coupling coefficient of the film, and a second film of p/sup +/ silicon semiconductor material having a positive temperature coefficient of resonance, and a substrate supporting the composite at its periphery, the ratio of thickness of the semiconductor film to the piezoelectric film determining the temperature coefficient of resonance.
- Assignee:
- Dept. of Energy, Washington, DC
- Patent Number(s):
- US 4719383
- OSTI ID:
- 5385561
- Resource Relation:
- Patent File Date: Filed date 30 Sep 1986
- Country of Publication:
- United States
- Language:
- English
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Piezoelectric shear wave resonator and method of making same
Piezoelectric shear wave resonator and method of making same
Related Subjects
36 MATERIALS SCIENCE
RESONATORS
FABRICATION
PIEZOELECTRICITY
RESONANCE
COMPOSITE MATERIALS
DESIGN
ELECTRICAL PROPERTIES
FILMS
SEMICONDUCTOR MATERIALS
SHEAR
SUBSTRATES
THERMODYNAMIC PROPERTIES
ELECTRICITY
ELECTRONIC EQUIPMENT
EQUIPMENT
MATERIALS
PHYSICAL PROPERTIES
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360603 - Materials- Properties