Helium atom scattering from the Si(111) surface at high temperatures

Journal Article · Fri Aug 01 04:00:00 EDT 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.56.4642· OSTI ID:538545

Lange, G; Meli, C A; Toennies, J P ^[1]; Greene, E F ^[2]

---

1. Max-Planck-Institut fuer Stroemungsforschung, Bunsenstrasse 10, 37073 Goettingen (Germany)
2. Department of Chemistry, Brown University, Providence, Rhode Island 02912 (United States)

Helium atom scattering has been used to investigate the structure of the Si(111) surface in the temperature range from 900 to 1600 K. Even below the well-known (7{times}7) to {open_quotes}(1{times}1){close_quotes} transition the adatoms become mobile, and, when the transition is reached near 1140 K, the specular- and integral-order diffraction peaks have sudden intensity changes, some up and others down, while the seventh-order peaks disappear. Above the transition the adatoms remain, moving rapidly on, and supported by, the ordered but relaxed, outer bilayer of the surface. A second transition, first reported by Ishizaka and co-workers occurs near 1470 K. The loss of all diffraction peaks and the attenuation of the specular peak indicate a completely disordered surface as the temperature approaches the melting point. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 538545
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 8 Vol. 56; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ATOM COLLISIONS
DIFFRACTION
HELIUM
SCATTERING
SILICON
SURFACE PROPERTIES
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K