Electronic Raman scattering as a function of doping in high-{Tc} superconductors
- Naval Research Lab., Washington, DC (United States)
- Univ. of Wisconsin, Madison, WI (United States). Physics Dept.
The authors report the results of Raman scattering from the electronic continuum in Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} (Bi 2212) and Ti{sub 2}Ba{sub 2}CuO{sub 6+{delta}} (Tl 2201) high temperature superconductors with variations in the oxygen content, {delta}. Below {Tc}, a peak develops in the Raman continuum associated with the opening of a superconducting gap, {Delta}(k). By selecting the polarizations of incident and scattered light, they are sensitive to possible anisotropy of the gap within the a-b plane. Near optimal doping, both materials show gap anisotropy, with 2{Delta}/k{sub B}{Tc} values of 7.2 (B{sub 1g}) vs. 5.8 (A{sub 1g}) in Tl 2202 and 8.5 (B{sub 1g}) vs. 6.2 (A{sub 1g}) in Bi 2212. In contrast, both show an isotropic gap at much lower energy shifts when the carrier concentration is raised: 2{Delta}/k{sub B}{Tc} = 3.9 (5.5) for Tl 2201 (Bi 2212) with {Tc} = 37K (57K). The authors compare the observed spectra with calculations based on order parameters with d-wave as well as isotropic s-wave symmetry and conclude that raising the doping level reduces the gap anisotropy to near zero.
- Sponsoring Organization:
- National Research Council, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- OSTI ID:
- 538205
- Report Number(s):
- CONF-960163--; ISBN 0-8194-2070-0
- Country of Publication:
- United States
- Language:
- English
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