Impurity effects and the nonstoichiometric defect characterization of CeO/sub 2-x/ and Ce/sub. 9/Zr/sub. 1/O/sub 2-x/ in the near-stoichiometric composition range
The electrical conductivity of CeO/sub 2-x/ was measured in the temperature range 800/sup 0/ to 1000/sup 0/C and 1 to 10/sup -3/ atm of oxygen partial pressures. It was found that the results were consistent with a defect model involving doubly ionized oxygen vacancies arising from both nonstoichiometry and lower valent cation impurities (e.g., Ca/sup +2/). A method of analysis was also developed to determine the equivalent amount of M/sup +2/ impurities. It was found that the effect of lower valent cation impurities can be compensated by counterdoping with Ta/sub 2/O/sub 5/. The completely compensated specimen exhibits the predicted behavior of pure ceria. The partial molal enthalpy change, ..delta..anti H/sub O/sub 2// of CeO/sub 2/ was calculated from the temperature variation of the electrical conductivity with the counterdoped specimen. The value of ..delta..anti H/sub O/sub 2// thus obtained, 9.96 +/- .65 eV, is in good agreement with previously reported results. The electrical conductivity of Ce/sub .9/Zr/sub .1/O/sub 2-x/ was also measured in the temperature range 800/sup 0/C to 1000/sup 0/C and 1 to 10/sup -3/ atm of oxygen pressures. It was found, again, that the results were consistent with a defect model involving doubly ionized oxygen vacancies arising from both lower valent cation impurities and nonstoichiometry.
- Research Organization:
- Marquette Univ., Milwaukee, WI (USA)
- OSTI ID:
- 5380018
- Resource Relation:
- Other Information: Thesis (Ph. D.)
- Country of Publication:
- United States
- Language:
- English
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