Irradiated solar cells fabricated from gallium-doped/boron-doped FZ and CZ silicon

Conference · Wed Sep 01 00:00:00 EDT 1982 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5379779

Minahan, J A; Dionne, N N.D.; Taylor, W E; Trumble, T M

The purpose of this study is to compare the tolerance to various fluence levels of 1 MeV electrons of solar cells fabricated from: gallium-doped multipass FZ silicon, boron-doped multipass FZ silicon, gallium doped CZ silicon and boron doped CZ silicon. The FZ materials used for the study were of ultra high purity with low levels of oxygen and carbon. Bulk analysis of gallium doped cold crucible (C/sup 3/Z) silicon is included and compared with gallium doped FZ silicon. Bulk analysis of selected wafers in the various crystals was performed by low temperature FTIR and surface photovoltage. Measurement of AMO electrical characteristics and spectral response of solar cells fabricated from these silicon materials before and after 1 MeV electron irradiation are used to compare radiation tolerance of the materials.

• Research Organization: Spectrolab, Inc., Sylmar, CA
• OSTI ID: 5379779
• Report Number(s): CONF-820906-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 16. IEEE photovoltaics specialists conference, San Diego, CA, USA, 28 Sep 1982
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON
CRYSTAL DOPING
ELECTRICAL PROPERTIES
SILICON SOLAR CELLS
COMPARATIVE EVALUATIONS
RADIATION EFFECTS
SPECTRAL RESPONSE
BORON ADDITIONS
ELECTRON BEAMS
GALLIUM ADDITIONS
MEV RANGE 01-10
ALLOYS
BEAMS
BORON ALLOYS
DIRECT ENERGY CONVERTERS
ELEMENTS
ENERGY RANGE
EQUIPMENT
GALLIUM ALLOYS
LEPTON BEAMS
MEV RANGE
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion