Mechanism of hydrogen sensing in Pd-Si metal-insulator-semiconductor diodes

Journal Article · Sun Sep 01 00:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336013· OSTI ID:5375737

Butler, M A

Capacitance, conductance, and photoinduced current measurements have been made on Pd-Si metal-insulator-semiconductor diodes to define the mechanism by which these devices sense hydrogen. The results have been used to construct a model which is capable of describing the major features of the response of these diodes to hydrogen. The current flow is found to be majority carrier dominated, through interface states at the SiO/sub 2/-Si interface. Changes in current under reverse bias upon exposure to hydrogen result from lowering of both the Schottky barrier and the oxide barrier height but not from changes in the interface density of states.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5375737
• Journal Information: J. Appl. Phys.; (United States), Vol. 58:5
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
HYDROGEN
ADSORPTION
SEMICONDUCTOR DIODES
CAPACITANCE
ELECTRIC CONDUCTIVITY
PHOTOCURRENTS
SORPTIVE PROPERTIES
CHARGE CARRIERS
EXPERIMENTAL DATA
INTERFACES
PALLADIUM
POTENTIALS
SILICA
SILICON
TESTING
CHALCOGENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
INFORMATION
METALS
MINERALS
NONMETALS
NUMERICAL DATA
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PLATINUM METALS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON COMPOUNDS
SILICON OXIDES
SORPTION
SURFACE PROPERTIES
TRANSITION ELEMENTS
420800* - Engineering- Electronic Circuits & Devices- (-1989)