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Domain growth in the three-dimensional dilute Ising model

Journal Article · · J. Stat. Phys.; (United States)
DOI:https://doi.org/10.1007/BF01009362· OSTI ID:5372890

The authors investigate the kinetics of domain growth in the three-dimensional Ising model with quenched random site dilution, using Monte Carlo simulation technique. A crossover from the power law growth regime to a much slower growth observed in our simulation is interpreted through the roughening of the interfaces by the quenched impurities. The results are also compared with the corresponding results in two dimensions.

Research Organization:
Temple Univ., Philadelphia, PA (USA)
OSTI ID:
5372890
Journal Information:
J. Stat. Phys.; (United States), Journal Name: J. Stat. Phys.; (United States) Vol. 49:3/4; ISSN JSTPB
Country of Publication:
United States
Language:
English