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Production of Si(/sup 1/D/sub 2/) from electronically excited SiH/sub 2/

Journal Article · · J. Phys. Chem.; (United States)
DOI:https://doi.org/10.1021/j100312a004· OSTI ID:5370664
Si(/sup 1/D/sub 2/) has been detected by atomic laser-induced fluorescence photoexcitation of SiH/sub 2/ into high bending vibrational levels of the A tilde/sup 1/B/sub 1/ state. The Si(/sup 1/D/sub 2/) + H/sub 2/ channel appears to open between v/sub 2/' = 6 and 7, establishing ..delta..H/sub f//sup 0/(SiH/sub 2/) = 65.4 +/- 1.6 kcal mol/sup -1/. SiH/sub 2/ appears to dissociate preferentially from high rotational levels of the A tilde, v/sub 2/' > 6 states.
Research Organization:
Massachusetts Institute of Technology, Cambridge
OSTI ID:
5370664
Journal Information:
J. Phys. Chem.; (United States), Journal Name: J. Phys. Chem.; (United States) Vol. 92:1; ISSN JPCHA
Country of Publication:
United States
Language:
English