Superconducting InGaAs junction field-effect transistors with Nb electrodes

Journal Article · Mon Oct 30 04:00:00 EST 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102166· OSTI ID:5365852

Kleinsasser, A W; Jackson, T N; McInturff, D; Rammo, F; Pettit, G D; Woodall, J M ^[1]

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1. IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598 (US)

We describe the design, fabrication, and characterization of superconducting In{sub 0.47}Ga{sub 0.53}As junction field-effect transistors (JFETs) with Nb source and drain electrodes. In{sub 0.47}Ga{sub 0.53}As has the advantage of combining large coherence length and high Schottky barrier transmission, making it a very attractive material on which to base superconducting FETs. At large voltages these devices behave as normal FETs in either enhancement or depletion modes, while at small voltages they act as Josephson junctions or super-Schottky diodes. Both normal and super- currents are controlled by the gate.

• OSTI ID: 5365852
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:18; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
DATA
DESIGN
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRODES
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
NIOBIUM
NUMERICAL DATA
PHYSICAL PROPERTIES
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUPERCONDUCTING DEVICES
SUPERCONDUCTING JUNCTIONS
TRANSISTORS
TRANSITION ELEMENTS