Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Characteristics of recombination processes in doped hydrated amorphous silicon films

Journal Article · · Sov. Phys. J. (Engl. Transl.); (United States)
DOI:https://doi.org/10.1007/BF00897333· OSTI ID:5362984
The results of measurements of the temperature dependences of the dark conductivity and photoconductivity of ..cap alpha..-Si:H films, doped from the gas phase or by implantation of phosphorus or boron ions, as well as the effect of preillumination with white light with different duration on the photoconductivity are presented. A model is proposed for carrier recombination in doped films, taking into account the broadening of the levels of dangling bonds and the difference in the coefficients trapping of electrons and holes on neutral and charged dangling bonds. The dependence of the stationary interband photoconductivity on the equilibrium Fermi level and the appearance of the temperature-induced quenching of the photoconductivity in doped films after preillumination are studied on the basis of this model.
Research Organization:
M. V. Lomonosov Moscow State Univ. (USSR)
OSTI ID:
5362984
Journal Information:
Sov. Phys. J. (Engl. Transl.); (United States), Journal Name: Sov. Phys. J. (Engl. Transl.); (United States) Vol. 30:6; ISSN SOPJA
Country of Publication:
United States
Language:
English