Electrolyte for EC-V profiling of InP and GaAs based structures
- Cleveland State Univ., OH (United States)
- National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
Electrochemical C-V (EC-V) profiling is the most often used and convenient method for accurate majority carrier concentration depth profiling of semiconductors. Although, according to the authors, FAP is the best electrolyte for accurate profiling of InP structures, it does not work well with other III-V compounds. To overcome this, recently, the authors have developed a new electrolyte, which they call UNIEL (UNIversal ELectrolyte), which works well with all the materials. However, as with the FAP electrolyte, the presence of HF makes the UNIEL incompatible with the electrochemical cell of Polaron EC-V profilers manufactured by BIO-RAD. By slightly modifying the electrochemical cell configuration the authors are able to use both the FAP and UNIEL electrolytes, without destroying the calomel electrode. Recently, they have, nevertheless, experimented with variations of the UNIEL with no HF content for EC-V profiling of structures based on InP and GaAs. Presently available results are presented here.
- OSTI ID:
- 536291
- Report Number(s):
- CONF-960498-; ISBN 0-7803-3283-0; TRN: IM9745%%130
- Resource Relation:
- Conference: 8. international conference on indium phosphide and related materials, Schwaebisch-Gmuend (Germany), 21-25 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Indium phosphide and related materials 1996: Proceedings; PB: 799 p.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures
Photoluminescence and photocurrent studies of interfacial defects at the InP/1m KCl electrolyte junction