Properties of (GaIn)As and InP bulk epitaxial layers, (GaIn)As/InP-heterostructures and -pin-detector device structures grown by using the alternative sources ditertiarybutyl-arsine and ditertiarybutyl phosphine
- Philipps Univ. Marburg (Germany); and others
In this work the use of the novel ditertiarybutyl-phosphorus and -arsenic precursors for low pressure metalorganic vapor phase epitaxy (LP-MOVPE) application with respect to InP/(GaIn)As-heterostructures and pin-detector device structures has been studied. Layer quality has been investigated by means of optical and scanning electron microscopy, temperature dependent van der Pauw-Hall measurements, temperature dependent luminescence measurements, high resolution double crystal X-ray diffraction, XRD- and PL-mappings, CV-depth profiling and SIMS measurements. The InP/(GaIn)As-multi quantum well heterostructures exhibit narrow XRD-linewidths of both the main reflection peak as well as the superlattice satellite peaks down to the theoretical limit. The n-type background doping-level of the (GaIn)As layers is reduced to 2 {times} 10{sup 15} cm{sup {minus}3} for optimized growth conditions. The low temperature luminescence is characterized by intense and narrow exciton transitions (2--3 meV FWHM). A InP/(GaIn)As-layer structure has been processed to planar pin-diode detector structures of 55 {micro}m diameter. The devices show dark currents in the range of 1--1.5 nA at a reverse bias of {minus}5 V. The distribution of the I/U-characteristic is homogeneous over the entire processed wafer area. The device yield exceeds 95%.
- OSTI ID:
- 536252
- Report Number(s):
- CONF-960498-; ISBN 0-7803-3283-0; TRN: IM9745%%91
- Resource Relation:
- Conference: 8. international conference on indium phosphide and related materials, Schwaebisch-Gmuend (Germany), 21-25 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Indium phosphide and related materials 1996: Proceedings; PB: 799 p.
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
VAPOR PHASE EPITAXY
ELECTRICAL PROPERTIES
OPTICAL PROPERTIES
INDIUM PHOSPHIDES
GALLIUM ARSENIDES
INDIUM ARSENIDES
SEMICONDUCTOR DETECTORS
ORGANOMETALLIC COMPOUNDS
THIN FILMS
X-RAY DIFFRACTION
HALL EFFECT
PHOTOLUMINESCENCE
ELECTRIC CURRENTS
EXPERIMENTAL DATA