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U.S. Department of Energy
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Bypass diode integration. Final report

Technical Report ·
DOI:https://doi.org/10.2172/5356632· OSTI ID:5356632
The results of a bypass diode integration study which was conducted as part of the Integrated Residential Photovoltaic Array Development effort are summarized. The study involved research into protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.
Research Organization:
General Electric Co., Philadelphia, PA (USA). Advanced Energy Programs Dept.
OSTI ID:
5356632
Report Number(s):
DOE/JPL/955894-4; ON: DE82011046
Country of Publication:
United States
Language:
English