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Title: Cadmium sulfide-copper sulfide heterojunction cell research. Quarterly report, June 1-August 31, 1981

Technical Report ·
OSTI ID:5356242

The localization and elimination of shunting defects in Cu/sub 2/S/CdS cells is reported. Cells free of such defects are shown to be voltage stable under prolonged exposure at open-circuit voltage. An attempt to eliminate shunting defects by interposing an insulating layer between the CdS and the ohmic back contact is reported. Further development of an alternate cell design utilizing a transparent substrate is reported and practical difficulties in producing such cells are described. Production of large grain CdS substrates for use in detailed studies of the Cu/sub 2/S layer has been only partially successful. Zinc contents in Cd/sub 1-x/Zn/sub x/S higher than about 20% are necessary in order to further improve the open-circuit voltage and conversion efficiency of Cu/sub 2/S based cells. Growth results for such films utilizing both compound sources and a three element source system are described. The three element source system has now been calibrated for both zinc and cadmium. Inhomogeneities in Cd/sub 1-x/Zn/sub x/S silms produced from various compound source designs are discussed.

Research Organization:
Solar Energy Research Inst., Golden, CO (USA); Delaware Univ., Newark (USA). Inst. of Energy Conversion
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5356242
Report Number(s):
SERI/PR-8309-1-T7; ON: DE82008760
Country of Publication:
United States
Language:
English