Measurement of charge-carrier concentration in indium phosphide by means of an electrolyte-semiconductor contact
An electrolyte-semiconductor contact is used to study the conductivity of epitaxial layers and single crystals of n-type indium phosphide obtained by gas transport. Some of the specimens were alloyed with tin and sulfur. The volt-farad characteristics are used to find the potentials of planar zones, which amount to 0.8-1.3 V for different electrolytes. Values of concentration of charge carriers calculated from measured values of capacitance of the electrolyte-indium-phosphide contact showed good agreement with measurements of the Hall effect on single crystals in the range 10/sup 16/-10/sup 18/ cm/sup -3/. The use of measurements of the capacitance of the electrolyte-semiconductor contact with simultaneous etching of a local region made it possible to study the electron distribution in epitaxial layers of indium phosphide.
- OSTI ID:
- 5355181
- Journal Information:
- Sov. Phys. J. (Engl. Transl.); (United States), Vol. 30:5; Other Information: Translated from Izv. Vyssh. Uchebon. Zaved., Fiz.; 30: No. 5, 71-74(May 1987)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
INDIUM PHOSPHIDES
CARRIER DENSITY
ETCHING
CAPACITANCE
CHARGE DISTRIBUTION
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
ELECTROLYTES
ELECTRON DENSITY
EPITAXY
HALL EFFECT
HYDROCHLORIC ACID
MERCURY
METALLURGICAL EFFECTS
N-TYPE CONDUCTORS
PHASE STUDIES
PHOSPHORIC ACID
SULFUR
TELLURIUM
TIN
ELECTRICAL PROPERTIES
ELEMENTS
HYDROGEN COMPOUNDS
INDIUM COMPOUNDS
INORGANIC ACIDS
MATERIALS
METALS
NONMETALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SURFACE FINISHING
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies