Optimization of an electron cyclotron resonance plasma etch process for [ital n][sup +] polysilicon: HBr process chemistry
- Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
- SEMATECH, Austin, Texas 78741-6499 (United States)
Designed experiments were employed to characterize a process for etching phosphorus doped polycrystalline silicon with HBr in a close-coupled electron cyclotron resonance plasma reactor configured for 200 mm wafers. A fractional factorial screening experiment was employed to determine the principal input factors and the main etch effects. Linear models of the process responses indicate rf power, O[sub 2] flow rate, and the position of the resonance zone (with respect to the wafer) as the three strongest factors influencing process performance. Response surfaces generated using data from a follow-on response surface methodology experiment predicted an optimum operating region characterized by relatively low rf power, a small O[sub 2] flow, and a resonance zone position close to the wafer. One operating point in this region demonstrated a polysilicon etch rate of 270 nm/min, an etch rate nonuniformity of 2.2% (1 std. dev.), an etch selectivity to oxide greater than 100:1, and anisotropic profiles. Particle test results for the optimized process indicated that careful selection of the O[sub 2] fraction is required to avoid residue deposition and particle formation.
- OSTI ID:
- 5353160
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 12:1; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON
ETCHING
BROMIC ACID
N-TYPE CONDUCTORS
OPTIMIZATION
PHOSPHORUS ADDITIONS
PLASMA
POLYCRYSTALS
ALLOYS
BROMINE COMPOUNDS
CRYSTALS
ELEMENTS
HALOGEN COMPOUNDS
HYDROGEN COMPOUNDS
INORGANIC ACIDS
MATERIALS
OXYGEN COMPOUNDS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SURFACE FINISHING
360606* - Other Materials- Physical Properties- (1992-)